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| d1 n-channel mosfet p-channel mosfet d1 d2 d2 g1 s2 g2 s1 top view 8 1 2 3 4 5 6 7 description ? ? ! ! " ! ! " # !$ % ! & ' ( ) ! * &+ , !! ! ( - #.+# / !# 0!.1 #.+# + 2 ! # !( 3% 0( ! 4 5 0 6733 2 ! !538 999 * +& advanced process technology ultra low on-resistance dual n and p channel mosfet surface mount available in tape & reel 150c operating temperature lead-free these hexfet ? power mosfet's in a dual so- 8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. additional features of these hexfet power mosfet's are a 150c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. the efficient so-8 package provides enhanced thermal characteristics and dual mosfet die capability making it ideal in a variety of power applications. this dual, surface mount so-8 can dramatically reduce board space and is also available in tape & reel. so-8 www.irf.com 1 www.irf.com 2 ! "#$ ! "#$ %% & ' ( ") ! $ & ' ( ") ! $ " %" ! *$ + + ! $ , %" ! $ % + ! $ + ! "#$ + ! "#$ - " ! *$ % " ! $ * * " * ") " * ") ! . /0( 123 45 66 7 7 -- , , % % * - " " -- 3 ! 89 !0( ( % : 2 8 3 ! 8/0( !0( ( * ( ' ( ( ** * - % + " " + ") ! $ ") ! $ , %% "* % -- + 120; 9 /0( : 42 8 5 ? ? : 42 8 5 '' ( & / (9 /0( ;& ( . 8 8 5 5 12(0( ( ! 9 /0( 3 45 0 < 8. 5 < . /0( 5 < . 9 => 88 >? 5 0;9 8 & 0;''9 8 188 !0 ( ( ;0 0 ( ( & @ ' ( ( 0% . (: % $# 3 # 81 37 ; ! 3% < =( " > $# "?: # 1 1 @ !" #$% ! ) ? / #$ a 1 8 ! *$ * %" 8 ! $ * %" 8 ! *$ & * ?, & - ? 8 ! $ & * ? & %" ? 8 " b ac 8 " b ac ! 00/0( 0 =:9 ? ! 08 /0( 0 =:9 ? 9 12 8 5 & @ & (@ < & @ & (@ 5 $ 8 ") ! *$ $# 8 ") ! $ $# ! ( 0 58 5 d8 = 0 d3 e3 ? *5 #+# 5+? 5 #+# 5+? = 3! # ! )0 8!# www.irf.com 3 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds 20s pulse width t = 25c a vgs top 7.5v 5.0v 4.0v 3.5v 3.0v 2.5v 2.0v bottom 1.5v 1.5v j 1 10 100 1000 0.1 1 10 100 i , drain-to-source current (a) d v , drain-to-source voltage (v) ds a vgs top 7.5v 5.0v 4.0v 3.5v 3.0v 2.5v 2.0v bottom 1.5v 1.5v 20s pulse width t = 150c j 1 10 100 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t = 25c t = 150c j j gs v , gate-to-source voltage (v) d i , drain-to-source current (a) a v = 15v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = 4.5v gs i = 4.3a d 0 300 600 900 1200 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0 5 10 15 20 25 q , total gate charge (nc) g v , gate-to-source voltage (v) gs a i = 2.6a v = 16v d ds for test circuit see figure 11 www.irf.com 4 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 t , case temperature ( c) i , drain current (a) c d ! "# $ "# $% 1 0.1 % 0 0 a + - v ds 90% 10% v gs t d(on) t r t d(off) t f ! &' ! q g q gs q gd v g charge ( &' d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 t = 25c t = 150c j j v = 0v gs v , source-to-drain voltage (v) i , reverse drain current (a) sd sd a www.irf.com 5 0.1 1 10 100 0.01 0.1 1 10 100 d ds 20s pulse width t = 150c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom - 1.5v -1.5v 0.1 1 10 100 0.01 0.1 1 10 100 d ds 20s pulse width t = 25c a -i , drain-to-source current (a) -v , drain-to-source voltage (v) j vgs top - 7.5v - 5.0v - 4.0v - 3.5v - 3.0v - 2.5v - 2.0v bottom - 1.5v -1.5v 0.1 1 10 100 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t = 25c t = 150c j j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) v = -15v 20s pulse width ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a i = -3.6a d v = -4.5v gs 0 500 1000 1500 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0 5 10 15 20 25 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) i = -2.2a v = -16v d ds for test circuit see figure 22 www.irf.com 6 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) -i , drain current (a) c d 1 10 100 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 1ms 10ms + - ! "# $ "# $% 1 0.1 % a v ds 90% 10% v gs t d(on) t r t d(off) t f ! &' ! q g q gs q gd v g charge ( &' 0 0 d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 0.1 1 10 100 0.3 0.6 0.9 1.2 1.5 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) www.irf.com 7 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) "# ) ' * +, $% www.irf.com 8 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 0 ? #.+# ! !# 81 0 ? ! !# 81 1 ) ! bb ? a . a# '1! !# ! ? '!$ 1 # ? ,!# ? '!$ '/( # =!3 - 0. ! 1 =! cc a . =! 63 - c -- ./ --- =! '!( '. # " . . 0 1)2 ) www.irf.com 9 so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070] dat e code (yww) xxxx international rectifier logo f7101 y = last digit of the year part number lot code ww = we e k example : t his is an irf7101 (mos fe t ) p = designates lead-free product (opt ional) a = as s e mb l y s i t e code notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/ www.irf.com 10 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel dimensions are shown in millimeters (inches) ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/2010 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. |
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